JPS6110989B2 - - Google Patents

Info

Publication number
JPS6110989B2
JPS6110989B2 JP51093839A JP9383976A JPS6110989B2 JP S6110989 B2 JPS6110989 B2 JP S6110989B2 JP 51093839 A JP51093839 A JP 51093839A JP 9383976 A JP9383976 A JP 9383976A JP S6110989 B2 JPS6110989 B2 JP S6110989B2
Authority
JP
Japan
Prior art keywords
gate
transistor
parasitic
resistance means
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51093839A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5318979A (en
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP9383976A priority Critical patent/JPS5318979A/ja
Publication of JPS5318979A publication Critical patent/JPS5318979A/ja
Publication of JPS6110989B2 publication Critical patent/JPS6110989B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP9383976A 1976-08-05 1976-08-05 Mis type integrated circuit Granted JPS5318979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9383976A JPS5318979A (en) 1976-08-05 1976-08-05 Mis type integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9383976A JPS5318979A (en) 1976-08-05 1976-08-05 Mis type integrated circuit

Publications (2)

Publication Number Publication Date
JPS5318979A JPS5318979A (en) 1978-02-21
JPS6110989B2 true JPS6110989B2 (en]) 1986-04-01

Family

ID=14093550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9383976A Granted JPS5318979A (en) 1976-08-05 1976-08-05 Mis type integrated circuit

Country Status (1)

Country Link
JP (1) JPS5318979A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63201209U (en]) * 1987-06-16 1988-12-26

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257558A (ja) * 1984-06-04 1985-12-19 Nec Corp 半導体集積回路装置
JPH03111426U (en]) * 1990-02-28 1991-11-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63201209U (en]) * 1987-06-16 1988-12-26

Also Published As

Publication number Publication date
JPS5318979A (en) 1978-02-21

Similar Documents

Publication Publication Date Title
US4288829A (en) Protective circuit on insulating substrate for protecting MOS integrated circuit
JP2638462B2 (ja) 半導体装置
US4009483A (en) Implementation of surface sensitive semiconductor devices
US5903424A (en) Method for protecting an integrated circuit against electro-static discharges
US5442217A (en) Semiconductor apparatus including a protection circuit against electrostatic discharge
JP2632720B2 (ja) 静電放電に対する保護がなされた、保護閾値が可変な集積回路
US3590340A (en) Breakdown preventing circuit and an integrated device thereof for a semiconductor device having an insulate gate electrode
JPH0151070B2 (en])
JPH0518469B2 (en])
EP0253105A1 (en) Integrated circuit with improved protective device
US5710452A (en) Semiconductor device having electrostatic breakdown protection circuit
KR900004726B1 (ko) 대규모 집적회로용 보호회로
US4990984A (en) Semiconductor device having protective element
JPH061833B2 (ja) Ｍｏｓ形半導体装置
JPS6110989B2 (en])
US5767537A (en) Capacitively triggered silicon controlled rectifier circuit
US6512663B1 (en) Electrostatic protection device and electrostatic protection circuit
KR970053847A (ko) 반도체 장치용 정전기 방지회로 및 그 제조방법
JP2671755B2 (ja) 入出力保護回路
JPS6146074B2 (en])
JPH04504030A (ja) Ｍｏｓデバイス用過電圧保護回路
JPS622704B2 (en])
JPH04206961A (ja) 半導体装置
JPH0315824B2 (en])
JPS63172468A (ja) 入力保護回路